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TEST DESCRIPTION |
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PACKAGE/PROCESS |
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Solder Heat Test (Optional) |
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Immersion in solder @ 260 °C for 12 sec
End-point electrical parameter @ 25 °C |
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Resist. to Solvents |
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1 dev per chemical for 1 min, then brush 10 times |
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Solderability Test |
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8 hrs steam age: TH: 245 °C / 5 sec
SMC: 215 °C for 5 sec (wetting) SMC: 260 °C for 10 sec (dewetting) |
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Die Shear / Stud Pull |
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Die Shear strength > 5.0 kg |
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BondPull |
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Bondpull strength > 2 gm |
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External Visual |
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Package defects, Lead defects |
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Internal Visual |
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Die defects, die-attach defects and wirebond defects |
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Lead Material/Plating
Thickness (Optional) |
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Process Cross Section | Cross Section shall be performed by the fabrication facility or by the Xilinx Process Technology Department. For Qual: all layers are shown with measurements. For Monitors: vias, contacts and metal step coverage measurements are required. |
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MICRO CIRCUIT FAMILY | ||||||||
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High Temp Life Test |
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125 °C / 168, 500 and 1000 hrs or equivalent
End-point electrical test @ 25 °C, verify device parameter drift (<10%) |
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Low Temp Life Test |
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< -10 ° C/1000 hrs
End-point electrical test @ 25 °C, verify device parameter drift (<10%) |
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ESD (HBM) |
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3 +ve and 3 -ve pulses, all pins tested, 2000 volts min. |
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High Temp Storage
(Optional) |
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150 °C / 500, 1000 hrs
End-point electrical test @ 25 °C |
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PACKAGE DESIGN | ||||||||
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Phy. Dimension |
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Per applicable pkg outline drawing
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Lead Integrity
Seal (Fine/Gross) |
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Cond. B2 (Use Cond. B1 for leaded chip carrier
pkgs
Cond. A, Tracer gas (he) fine leak & Cond. C, Perfluorocarbon gross leak |
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Thermal Shock +
Temp Cycle + Moisture Resistance Seal (Fine/Gross) |
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Cond C, -65/150 °C (Liquid to Liquid),
15 cycles
Cond C, -65/150 °C (Air to Air), 100 cycles 90% RH/ -10/25/65 °C, 10 cycles Cond. A, Tracer gas (he) fine leak & Cond. C, Perfluorocarbon gross leak |
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| Visual Examination |
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Per visual criteria in Method 1011 and Method
1004
End-point electrical Test @ 25 °C |
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Mechanical Shock +
Variable Freq. Vibration + Constant Acceleration Seal (Fine/Gross) |
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Cond. B, 1500 G Peak, 0.5 msec pulse duration
Cond. A, at peak acceleration of 20 g Cond. E - For Pkg < 5 gms or inner sealed cavity < 2 inches Cond. D - For Pkg >= 5 gms or inner sealed cavity >= 2 inches Cond. A, Tracer gas (he) fine leak & |
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| Visual Examination |
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Cond. C, Perfluorocarbon gross leak
Per visual criteria in Method 1011 and Method 1004 End-point electrical test @ 25 °C |
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Salt Atmosphere
Visual Examination Seal (Fine/Gross) |
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Cond A, soak time = 24 hrs
Per visual criteria in method 1009 Cond A, Tracer gas (he) fine leak & Cond C, Perfluorocarbon gross leak |
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Internal Vapor Content |
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5000 ppm max. at 100 °C |
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Adhesion of L/Finish
(Optional) |
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Bend Coated lead at an angle of 90° until
fracture occurs.
No flaking, peeling or detachment of coating at the interface. |
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Lid Torque |
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Applicable to Glass Frit Sealed Package only
The Torque value must meet the minimum limits as specified in Table #1 of the Mil-Std-883 Method 2024.2 |
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Temp Cycle
Seal (Fine/Gross) |
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Cond C -65/150 °C, 500 cycles
Cond A, Tracer gas (he) fine leak & Cond C, Perfluorocarbon gross leak End-point electrical test @ 25 °C |
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ELECTRICAL ENDURANCE/EVALUATION & PROCESS VALIDATION DATA | ||||||||
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Electrical Test
& Datalog |
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@ 25 °C, Top min. & Top max. |
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Electrical
Characterization |
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Schmoo plot & Temperature trends for critical parameters |
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T.D.D.B. |
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Characterization of oxide integrity |
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Latch-Up |
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a) Immunity to PSOV of 20% over absolute Maximum
voltage
b) Immunity to +/-200mA current injection into I/O pins |
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Electromigration |
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Characterization of Metallisation system
> 100,000 hours for 0.1% cumulative failures > 100,000 hours for 50% cumulative failures |
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Photosensitivity
(Optional) |
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Apply 25W neon bulb, distance = 50 cm during electrical test. |
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Data Retention Bake |
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Write device with suitable pattern, bake @
150 °C for 1000 hrs
Read and confirm data pattern End-point electrical test @ 25 °C |
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Input/Output
Capacitance |
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Biased @ nominal operating voltage |
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Power Cycling |
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5000 cycles @ 50 °C with Vcc = 5.0V
Vpp = 12 to 12.5 V |
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1)
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For any Qual or Product Monitor where sample size does not meet the Standard Quality level, approval from product Engineering and Product QA is required. | |||
| 2) | The Product Monitor Frequency applies to each package family with assembly locations and package type rotated each Quarter (when applicable). If only one package type exists within a package family, the product monitor frequency will be 1x / 12 months, minimum. | |||
| 3) | The Product Monitor Frequency applies to each Micro Circuit Family. Plastic monitor data may be used to satisfy this requirement. | |||
| 4) | End-point electrical test shall be performed within 48 hrs window. | |||
| 5) | Interim read point is optional. | |||
| 6) | The sample size is for numbers of bonds or numbers of leads. | |||
| 7) | For LCC packages, use LTPD 15, 15 (0,1). | |||
| 8) | Military QCI monitor data may be used to satisfy this requirement. | |||
| 9) | End-point electrical test @ 25 °C shall be performed within 48 hrs after moisture resistance test. | |||
| 10) | T.D.D.B. - Time Dependent Dielectric Breakdown | |||
| 11) | In process monitor data may be used to satisfy the Qual requirement; refer to Assy Qual lot traveller or Fab monitor data. | |||
| 12) | Not applicable to FPGA's; H.T.O.L. test data @ 150 +0/-5 °C may be used to satisfy this requirement. | |||