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QDR SRAM - Glossary


|   A - H   |    I - Z    |
This glossary defines important concepts, terms, and abbreviations related to QDR SRAM controllers.  Please use your browser's "Find" function to locate the desired information. 

A thru H
Definition of Terms I-P
Access Time The time it takes to get data into and out of a memory device.
Address A number that represents a location in the memory. Usually shown in a hexadecimal value for memory or storage.
Architecture A general term for describing the design and look of a electronic component; can either describe hardware or software.
Data Width Total number of bits/bytes of data that can be accessed (read or written) simultaneously.
DDR Double Data Rate. This memory transfers data on both edges of the clock.
DRAM (Dynamic Random Access Memory) memory that consists of small capacitors for each bit of memory. Since capacitors do not hold a charge indefinitely, DRAM must be constantly refreshed to avoid losing its contents. Also, the process of reading the contents of the memory are destructive, meaning extra time must be spent restoring the contents of memory addresses which are accessed, so DRAM is slower than SDRAM
MHz MegaHertz. A million cycles per second.
Memory Controller An ASIC or FPGA which interfaces with a memory and enables data transfer.
I thru Z
A-H
NoBL SRAM No Bus Latency SRAM
PBSRAM PBSRAM stands for Pipeline Burst SRAM. The PBSRAM devices have input and output registers for data, which are not incorporated into the flow-through device. This allows the pipelined device to operate with a much faster cycle time than the flow-through version. 
QDR QDR stands for Quad Data Rate. QDR uses two ports to independently run at Double Data Rate, the net result is four data items per clock cycle, or Quad Data Rate.
RAM Random Access Memory is a device that is able to store and retrieve data in any random sequence or location.
Random access Reading locations directly without having to read in a particular sequence.
SRAM (Static Random Access Memory) SRAM consists of one flip-flop per bit of memory. Unlike DRAMs, static RAM retains its contents as long as power is applied. Because there is no need to refresh the contents of memory addresses which are read, SRAM is faster than DRAM, but it is more expensive and typically is available in much smaller sizes than DRAM because each bit occupies more space on the chip.
ZBT Zero Bus Turnaround (ZBT) is a synchronous SRAM architecture optimized for networking and telecommunications applications. It can increase the internal bandwidth of a switch fabric when compared to standard SyncBurst SRAM. ZBT SRAMs became the de facto industry standard for these applications when they were introduced, much like Synchronous Burst SRAMs are the industry standard in the PC cache market.

The ZBT architecture is optimized for switching and other applications with highly random READs and WRITEs. ZBT SRAMs eliminate all idle cycles when turning the data bus around from a WRITE operation to a READ operation (or vice versa). This feature results in dramatic performance improvements in systems that have such traffic patterns, i.e., frequent and random read and write access to the SRAM.




More Information
QDR SRAM Documentation QDR SRAM Solution Overview
Free VHDL Source Code QDR SRAM FAQ's
QDR SRAM Press Release Xilinx QDR SRAM Electronic Design ArticleInternet Link
Visit the QDR Consortium Home PageInternet Link Xilinx at Work
Contact the Xilinx at Work Team