Semiconductor Device Models

Diode

    Module Name
    diode.va     		diode
    Terminals anode    : positive terminal : inout electrical
    cathode : negative terminal : inout electrical
    Parameter area : device area = 1 from (0:inf)
    is : saturation current = 1e-14 from (0:inf)
    n : emission coefficient = 1 from (0:inf)
    cjo : zero-bias junction capacitance = 0 from [0:inf)
    m : grading coefficient = 0.5 from [0:inf)
    phi : body potential = 0.7 exclude 0
    fc : forward bias capacitance factor = 0.5 from (0:1]
    tt : transit time = 1p from [0:inf)
    bv : reverse breakdown voltage = inf from [0:inf)
    rs : series resistance = 0 from [0:inf)

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Thin-Film MOS

    Module Name
    thinfilm_mos.va     		thinfilm_mos
    Terminals nd : drain terminal : inout electrical
    ngf : front gate terminal : inout electrical
    ns : source terminal : inout electrical
    ngb : back gate terminal : inout electrical
    Parameter l : device length (m) = 10u from (0:inf)
    w : device width (m) = 10u from (0:inf)
    toxf : front gate oxide thickness (m) = 20n from (0:inf)
    toxb : back gate oxide thickness (m) = 0.5u from (0:inf)
    nsub : substrate doping (1/cm^3) = 1.0e14 from (0:inf)
    ngate : gate doping (1/cm^3) = 1.0e19 from (0:inf)
    nbody : body doping (1/cm^3) = 5.0e15 from (0:inf)
    tb : body thickness (m) = 0.1u from (0:inf)
    u0 = 700 from (0:inf)
    lambda : channel length modulation = 0.05
    type : type (1=nmos,-1=pmos) = 1 from [-1:1] exclude 0

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Operational Amplifier

    Module Name
    opamp.va     		opamp
    Terminals vinp : positive input terminal : inout electrical
    vinm : negative input terminal : inout electrical
    vdd : positive power supply : inout electrical
    vss : negative power supply : inout electrical
    voutp : positive output terminal : inout electrical
    voutm : negative output terminal : inout electrical
    Parameter gain : open loop gain (dB) = 100 from (0:inf)
    three_dB_freq : 3dB frequency (Hz) = 1M from (0:inf)
    rin : input resistance (O) = 1M from (0:inf)
    cin : input capacitance (F) = 1n from (0:inf)
    iout_max : maximum output current (A) = 100n from (0:inf)
    vout_offset : dc output voltage offset (V) = 0
    rout : output resistance (O) = 80 from (0:inf)
    volc : output voltage saturation coefficient = 1

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Josephson Tunnel Contact

    Module Name
    josephson_contact.va    		 josephson_contact
    Terminals p1,p2,p3,p4: contact terminal : inout electrical
    Parameter cj: junction capacitance (F) = 0.5p from (0.33p:1p)
    rj: junction resistance (Ohm) = 1 from (0.5:25)
    i0: junction current amplitude (A) = 10u from (5:1000u)

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   Last updated on
   December 11, 1998